Measurement of space charge generation-recombination current in Hg1−xCdxTe photodiodes by deep level transient spectroscopy
- 31 August 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (8) , 719-723
- https://doi.org/10.1016/0038-1101(81)90052-6
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Deep level transient spectroscopy in Hg1−xCdxTeSolid State Communications, 1980
- Effect of trap tunneling on the performance of long-wavelength Hg1-xCdxTe photodiodesIEEE Transactions on Electron Devices, 1980
- Electric field effect on the thermal emission of traps in semiconductor junctionsJournal of Applied Physics, 1979
- The effect of annealing temperature on the carrier concentration OF Hg0.6Cd0.4TeJournal of Electronic Materials, 1978
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Fast capacitance transient appartus: Application to ZnO and O centers in GaP p-n junctionsJournal of Applied Physics, 1974
- Thermally stimulated capacitance for shallow majority-carrier traps in the edge region of semiconductor junctionsApplied Physics Letters, 1973
- The Three-Dimensional Poole-Frenkel EffectJournal of Applied Physics, 1968
- Cascade Capture of Electrons in SolidsPhysical Review B, 1960
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952