Properties of Amorphous Silicon Nitride Prepared at High Deposition Rate
- 1 June 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (6A) , L469
- https://doi.org/10.1143/jjap.24.l469
Abstract
A high deposition rate of more than 2.2 nm/s was achieved for hydrogenated amorphous silicon nitride film by applying the substrate tuning method to glow-discharge decomposition of SiH4+NH3. The atomic ratio N/Si (1.1±0.1) in the film is nearly constant, irrespective of the increase of deposition rate. The valence-electron density and atomic density increase and buffered HF etch rate decreases with deposition rate. This high rate deposition method improves density in amorphous silicon nitride films.Keywords
This publication has 9 references indexed in Scilit:
- Electronic structure of hydrogenated and unhydrogenated amorphous: A photoemission studyPhysical Review B, 1984
- New mode of plasma deposition in a capacitively coupled reactorApplied Physics Letters, 1984
- Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition RateJapanese Journal of Applied Physics, 1984
- Amorphous silicon-silicon nitride thin-film transistorsApplied Physics Letters, 1981
- The preparation, characterization and applications of silicon nitride thin filmsThin Solid Films, 1980
- Hydrogen concentration profiles and chemical bonding in silicon nitrideJournal of Electronic Materials, 1979
- The hydrogen content of plasma-deposited silicon nitrideJournal of Applied Physics, 1978
- Synthesis and crystal structure of (ThCu3)(Mn3+2Mn4+2)O12, a new ferrimagnetic perovskite-like compoundJournal of Solid State Chemistry, 1976
- Characterization of Silicon Nitride FilmsJournal of the Electrochemical Society, 1971