Diffraction determination of the structure of metastable three-dimensional crystals of Ge grown on Si(001)
- 26 August 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (9) , 1061-1063
- https://doi.org/10.1063/1.106345
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Observation of an ordered structure in the initial stage of Ge/Si heteroepitaxial growthApplied Physics Letters, 1990
- Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)Physical Review Letters, 1990
- Observation of Order-Disorder Transitions in Strained-Semiconductor SystemsPhysical Review Letters, 1985
- LEED studies of surface imperfectionsApplications of Surface Science, 1982