A 900-MHz fully integrated SOI power amplifier for single-chip wireless transceiver applications
- 1 October 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 35 (10) , 1481-1486
- https://doi.org/10.1109/4.871326
Abstract
This paper presents a silicon-on-insulator (SOI) fully integrated RF power amplifier for single-chip wireless transceiver applications. The integrated power amplifier (IPA) operates at 900 MHz, and is designed and fabricated using a 1.5-/spl mu/m SOI LDMOS/CMOS/BJT technology. This technology is suitable for the complete integration of the front-end circuits with the baseband circuits for low-cost low-power high-volume production of single-chip transceivers. The IPA is a two-stage Class E power amplifier. It is fabricated along with the on-chip input and output matching networks. Thus, no external components are needed. At 900 MHz and with a 5-V supply, the power amplifier delivers 23-dBm output power to a 50-/spl Omega/ load with 16-dB gain and 49% power-added efficiency.Keywords
This publication has 12 references indexed in Scilit:
- A 3.5 mW 2.5 GHz diversity receiver and a 1.2 mW 3.6 GHz VCO in silicon-on-anythingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 2-GHz Si power MOSFET technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A SOI LDMOS/CMOS/BJT technology for fully-integrated RF power amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 900 MHz SOI fully-integrated RF power amplifier for wireless transceiversPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- The detailed analysis of high Q CMOS-compatible microwave spiral inductors in silicon technologyIEEE Transactions on Electron Devices, 1998
- A single-chip 900-MHz spread-spectrum wireless transceiver in 1-μm CMOS. I. Architecture and transmitter designIEEE Journal of Solid-State Circuits, 1998
- RF circuit design aspects of spiral inductors on siliconIEEE Journal of Solid-State Circuits, 1998
- Thin film SOI emergesIEEE Spectrum, 1997
- IC compatible planar inductors on siliconIEE Proceedings - Circuits, Devices and Systems, 1997
- Low voltage, high efficiency GaAs Class E power amplifiers for wireless transmittersIEEE Journal of Solid-State Circuits, 1995