Resonant tunneling diodes with AlAs barrier: Guides for improving room-temperature operation

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Abstract
In this communication experimental results of AlAs/GaAs/AlAs resonant tunneling diodes are compared to theory, and the effect of higher resonant states on the room-temperature resonant tunneling current peak-valley ratio is studied. It is shown that for a well thickness of 70 Å, the leakage current through higher resonant states of the well can reduce the peak-to-valley current ratio by more than 400% when compared to a similar diode of 50-Å well thickness. Through these studies a summary of suggestions is listed, which is intended to improve the room-temperature operation of resonant tunneling diodes.