Minority-carrier lifetime in AlxGa1−xAs grown by molecular-beam epitaxy
- 1 March 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (5) , 3094-3096
- https://doi.org/10.1063/1.348573
Abstract
AlxGa1−xAs (x>0.30) double heterostructures are grown by molecular‐beam epitaxy (MBE) and the minority‐carrier lifetimes are measured by time‐resolved photoluminescence. The data indicate that the minority‐carrier lifetimes in high aluminum (x>0.30) AlxGa1−xAs grown by MBE are comparable to the previously published lifetimes of material grown by liquid‐phase epitaxy. The lifetimes in MBE materials appear to be somewhat larger than those measured in materials grown by metalorganic chemical vapor deposition. Factors affecting AlGaAs minority‐carrier lifetime, such as the growth temperature, the aluminum concentration, and the confinement layer composition will be discussed.This publication has 9 references indexed in Scilit:
- Measurement of AlGaAs/AlGaAs interface recombination velocities using time-resolved photoluminescenceApplied Physics Letters, 1990
- Effect of Al mole fraction on carrier diffusion lengths and lifetimes in AlxGa1−xAsApplied Physics Letters, 1989
- Minority-carrier lifetime in AlxGa1−xAsJournal of Vacuum Science & Technology A, 1989
- Photoluminescence lifetime in heterojunctionsSolar Cells, 1988
- Minority-carrier lifetime in n-Al0.38Ga0.62AsJournal of Applied Physics, 1988
- Accurate electron probe determination of aluminum composition in (Al, Ga)As and correlation with the photoluminescence peakJournal of Applied Physics, 1985
- Minority carrier lifetime and luminescence in MOVPE-grown (Al,Ga)As epilayers and DH lasersJournal of Crystal Growth, 1981
- Concentration-dependent absorption and spontaneous emission of heavily doped GaAsJournal of Applied Physics, 1976
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952