A new cylindrical capacitor using hemispherical grained Si (HSG-Si) for 256Mb DRAMs
- 1 January 1992
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 259-262
- https://doi.org/10.1109/iedm.1992.307355
Abstract
This HSG-Si cylindrical capacitor structure achieves a cell capacitance of 30 fF with 0.4 mu m-high storage electrode in a 0.72 mu m/sup 2/ cell area. A new selective etching technique using a low-pressure vapor hydrogen fluoride is developed to form the cylindrical capacitor electrode. The high selective etching (2000 times) of borophosphosilicate-glass to SiO/sub 2/ is realized. Disilane molecule irradiation in ultra-high vacuum chamber achieves the HSG-Si formation on the whole surface of phosphorous doped amorphous Si cylindrical electrode.Keywords
This publication has 4 references indexed in Scilit:
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