Raman and photoluminescence investigations of ZnSe-ZnS strained-layer superlattices
- 31 August 1988
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 67 (8) , 779-782
- https://doi.org/10.1016/0038-1098(88)90023-3
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Raman probing of ZnTe-ZnS strained-layer superlatticesSolid State Communications, 1987
- Folded acoustic phonons in Si/strained-layer superlatticesPhysical Review B, 1987
- ZnSe-ZnS strained-layer superlattice grown by low pressure metalorganic vapor phase epitaxy using methylalkylsApplied Physics Letters, 1986
- Properties of Photoluminescence from ZnTe–ZnSe SuperlatticesJapanese Journal of Applied Physics, 1986
- Photoluminescence study of ZnSe–ZnTe strained-layer superlattices grown on InP substratesJournal of Applied Physics, 1986
- Folded acoustic phonons in Si-superlatticesPhysical Review B, 1986
- Raman scattering from GexSi1−x/Si strained-layer superlatticesApplied Physics Letters, 1984
- Disorder-Activated Acoustic Mode in Raman Spectrum ofPhysical Review Letters, 1972
- Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type SemiconductorsPhysical Review B, 1972
- Pressure-Induced Phonon Frequency Shifts Measured by Raman ScatteringPhysical Review B, 1969