GaAs-based In0.29 Al0.71As/In0.3Ga0.7As high-electron mobility transistors
- 20 February 1996
- journal article
- research article
- Published by Wiley in Microwave and Optical Technology Letters
- Vol. 11 (3) , 148-150
- https://doi.org/10.1002/(sici)1098-2760(19960220)11:3<148::aid-mop10>3.0.co;2-7
Abstract
No abstract availableKeywords
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