AVALANCHE SHOCK FRONTS IN p-n JUNCTIONS
- 15 May 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 14 (10) , 320-323
- https://doi.org/10.1063/1.1652667
Abstract
A new transient mode of avalanche breakdown in p‐n junctions is described. For sufficiently high current, a region of impact ionization of carriers advances as a shock front whose velocity can be several times faster than the carrier‐saturated drift velocity. Since the passing disturbance rapidly fills the depletion region with a dense plasma of holes and electrons, it has been used to interpret the observed high‐efficiency microwave oscillations of the trapped‐plasma ``TRAPATT'' mode. An approximate analysis is given, and compared with numerical calculations.Keywords
This publication has 3 references indexed in Scilit:
- High-efficiency oscillations in germanium avalanche diodes below the transit-time frequencyProceedings of the IEEE, 1968
- High-power, high-efficiency silicon avalanche diodes at ultra high frequenciesProceedings of the IEEE, 1967
- Negative resistance in p-n junctions under avalanche breakdown conditions, part IIEEE Transactions on Electron Devices, 1966