Si-Ge Strained Layer Heterostructures: Device Possibilities and Process Limitations
- 1 January 1993
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 72 references indexed in Scilit:
- High-transconductance n-type Si/SiGe modulation-doped field-effect transistorsIEEE Electron Device Letters, 1992
- Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxyApplied Physics Letters, 1991
- Electron resonant tunneling in Si/SiGe double barrier diodesApplied Physics Letters, 1991
- Si/SiGe digital optoelectronic switchIEEE Electron Device Letters, 1991
- Electroluminescence and photoluminescence from Si1−xGex alloysApplied Physics Letters, 1991
- 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistorsIEEE Electron Device Letters, 1990
- Resonant tunneling in Si/Si1−xGex double-barrier structuresApplied Physics Letters, 1988
- 1.3-μm light-emitting diode from silicon electron irradiated at its damage thresholdApplied Physics Letters, 1987
- Measurement of the band gap of GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985
- 1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxyApplied Physics Letters, 1985