Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux
- 1 December 1998
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 13 (12) , 1469-1471
- https://doi.org/10.1088/0268-1242/13/12/001
Abstract
The effect of using an indium flux during the MBE growth of GaN layers was investigated. The properties of these layers were studied using electron probe microanalysis, secondary ion mass spectroscopy, photoluminescence and cathodoluminescence. The optical properties of the GaN layers are shown to improve as compared with undoped GaN layers grown under nominally the same conditions but without an additional indium flux.Keywords
This publication has 7 references indexed in Scilit:
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Emerging gallium nitride based devicesProceedings of the IEEE, 1995
- Investigation of high-quality GaAs:In layers grown by molecular-beam epitaxyJournal of Applied Physics, 1989
- Trap suppression by isoelectronic In or Sb doping in Si-doped n-GaAs grown by molecular-beam epitaxyJournal of Applied Physics, 1988
- Electrical properties of indium doped GaAs layers grown by MBEJournal of Crystal Growth, 1987
- Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In dopingApplied Physics Letters, 1986
- An In-Doped Dislocation-Free GaAs Layer Grown by MBE on In-Doped GaAs SubstrateJapanese Journal of Applied Physics, 1986