Electrical properties of indium doped GaAs layers grown by MBE
- 1 February 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 81 (1-4) , 314-318
- https://doi.org/10.1016/0022-0248(87)90410-6
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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