Behavior of SiNx films as masks for Zn diffusion
- 1 August 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (3) , 828-831
- https://doi.org/10.1063/1.339714
Abstract
The detailed behavior of SiNx films as masks for Zn diffusion into GaAs at both low and high temperatures has been investigated. It is found that the film behavior as a mask is a function of the refractive index of the SiNx mask film and that a film with index n=2.06 shows optimum performance at both 650 and 950 °C. The experimental results suggest that the film with n=2.06 is nearly stoichiometric. Possible reasons for this optimized masking behavior are discussed.This publication has 17 references indexed in Scilit:
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