Simple structured PMOSFET fabricated using molecular layer doping
- 1 March 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (3) , 105-106
- https://doi.org/10.1109/55.46948
Abstract
The application of molecular layer doping (MLD) to the formation of shallow source and drain regions of a PMOSFET is discussed. The MLD process consists of three steps. First, the natural oxide on the Si surface is removed by thermal cleaning to expose an active Si surface. Second, a boron adsorbed layer is formed on the Si surface. Third, boron atoms undergo solid-phase diffusion from the adsorbed layer into the bulk. The electrical characteristics of the PMOSFET in the short-channel region are superior to those of devices fabricated by conventional techniques.Keywords
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