Passive GaAs FET Switch Models and Their Application in Phase Shifters
- 1 January 1987
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 903-906
- https://doi.org/10.1109/mwsym.1987.1132564
Abstract
A new device model is proposed for the zero bias (V/sub gs/ = 0) and pinch off (V/sub gs/ -V/sub p/) states for GaAs MESFETs operated in a passive mode (I/sub ds/ = 0). The agreement between measurements and predicted S-parameter data is better than 90% which is 40-50% improvement over previously published models. The FET switch model will be discussed. The fabrication and performance of 12 GHz MMIC phase shifters designed using this new model will be described.Keywords
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