Suppression of stress-induced leakage current in ultrathin N2O oxides
- 1 June 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (22) , 2809-2811
- https://doi.org/10.1063/1.106835
Abstract
In this letter, the stress‐induced leakage current (SILC) is studied in N2O gate oxide. Compared to control thermal oxide grown in O2, N2O oxide shows suppressed SILC, and the suppression is more pronounced under substrate electron injection. Moreover, the dependence of SILC on stress current density is smaller for N2O oxide. The suppressed SILC in N2O oxide is attributed to the nitrogen incorporation during N2O oxidation, which reduces the electron trap generation rate and the density of weak oxide spots.Keywords
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