Crystallinity of GaN Film Grown by ECR Plasma-Excited MOVPE
- 1 September 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (9R)
- https://doi.org/10.1143/jjap.29.1654
Abstract
In the ECR plasma-excited MOVPE of GaN film, a strong correlation was found between carbon incorporation into the film and the crystallinity change from single crystal to polycrystal. Mass spectroscopic analysis showed that undissociated TMGa in the ECR plasma played an important role in the crystallinity change mechanism.Keywords
This publication has 6 references indexed in Scilit:
- Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxyApplied Physics Letters, 1989
- Substrate Temperature Dependence of Carbon Incorporation into GaAs Grown by MBE Using Triethylgallium and As4Japanese Journal of Applied Physics, 1989
- Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (11 2̄0) and (0001) Sapphire SubstratesJapanese Journal of Applied Physics, 1988
- Low temperature growth of GaN single crystal films using electron cyclotron resonance plasma excited metalorganic vapor phase epitaxyJournal of Crystal Growth, 1986
- Electrical properties and ion implantation of epitaxial GaN, grown by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1983
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969