Epitaxial layer transfer by bond and etch back of porous Si
- 18 April 1994
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (16) , 2108-2110
- https://doi.org/10.1063/1.111698
Abstract
We demonstrate a novel method for bond and etch back silicon on insulator in which an epitaxial Si layer over porous Si is transferred onto a dissimilar substrate by bonding and etch back of porous Si. The highest etching selectivity (100 000:1) between the porous Si and the epitaxial layer is achieved by the alkali free solution of HF, H2O2, and H2O which is essential for this single etch‐stop method to produce a submicron‐thick active layer with superior thickness uniformity (473±14 nm) across a 5 in. silicon‐on‐insulator wafer.Keywords
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