Atmospheric Pressure Atomic Layer Epitaxy of ZnSe Using Zn and H2Se
- 1 December 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (12A) , L2165
- https://doi.org/10.1143/jjap.29.l2165
Abstract
Atmospheric pressure ALE (atomic layer epitaxy) has been achieved to grow ZnSe for the first time using Zn and H2Se. It is confirmed that the growth rate is controlled by the self-limiting process itself. The ALE growth of ZnSe is observed in the substrate temperature range of 350–500°C and in the input partial pressure ranges of 5×10-6–1×10-4 atm for Zn and 4×10-5–2×10-3 atm for H2Se. Lattice parameters perpendicular to the surface plane and the values of FWHM for the diffraction pattern were obtained by the X-ray double-crystal diffraction measurement.Keywords
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