Atomic layer epitaxy of GaAsP and InAsP by halogen system
- 1 January 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 99 (1-4) , 556-559
- https://doi.org/10.1016/0022-0248(90)90582-6
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
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