Zinc Oxide Thin Films Prepared by the Electron-Cyclotron-Resonance Plasma Sputtering Method

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Abstract
Zinc oxide (ZnO) thin films have been prepared by a sputtering deposition utilizing electron-cyclotron-resonance (ECR) plasma. An X-ray diffraction analysis indicated that the ZnO films were highly c-axis oriented. The electrical resistivity of ZnO films is as high as 2.5 MΩcm. It is confirmed that the ZnO films exhibit strong piezoelectricity. For a film-thickness-to-wavelength ratio h/λ of about 0.16, the effective electromechanical coupling coefficient k 2 for a surface acoustic wave was 0.7%, which is above 90% of the calculated value. The measured values of k 2 are comparable to those of the films fabricated by other conventional sputtering methods. In addition, optical emission spectroscopy was carried out during the deposition.