SiGe-Si quantum-well electroabsorption modulators
- 1 June 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 10 (6) , 807-809
- https://doi.org/10.1109/68.681491
Abstract
We have measured the characteristics of SiGe-Si quantum-well (QW) waveguide electroabsorption modulators grown by molecular beam epitaxy (MBE). The modulation is based on the decoupling of the electron wavefunction from the shallow wells for electrons with a small band-bending. A 100-μm-long modulator demonstrates contrast ratio and insertion loss of 1.43 and 28.5 dB, respectively.Keywords
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