Investigation of Metal/GaAs Reactions by Heavy Ion Rutherford Backscattering Spectrometry(HIRBS)
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Structure and composition of NixGaAsApplied Physics Letters, 1986
- Applications of Heavy-Ion Rutherford Backscattering Spectrometry (HIRBS) to the analysis of contact structures on GaAs and GeNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Epitaxial Phases Formation Due to Interaction Between Ni Thin Films and GaAsMRS Proceedings, 1984
- Interfacial reaction and Schottky barrier between Pt and GaAsJournal of Applied Physics, 1983
- Structural characterization of the interfacial reactions between palladium and gallium arsenideJournal of Vacuum Science and Technology, 1982
- Alloying reaction in thin nickel films deposited on GaAsThin Solid Films, 1980
- Thin Films—Interdiffusion and ReactionsJournal of the Electrochemical Society, 1979
- Contact reactions in Pd/GaAs junctionsJournal of Applied Physics, 1979
- Reaction of sputtered Pt films on GaAsJournal of Physics and Chemistry of Solids, 1975
- Effect of alloying behavior on the electrical characteristics of n-GaAs Schottky diodes metallized with W, Au, and PtApplied Physics Letters, 1973