Influence of X-irradiation on the solicon-silicon dioxide interface of MOS structures
- 1 January 1974
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 3 (1) , 77-80
- https://doi.org/10.1007/bf00892337
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Interface states in SiSiO2 interfacesSolid-State Electronics, 1972
- On the study of irradiated MOS structures at very low frequencySolid-State Electronics, 1972
- Irradiation effects in SiO2 polymorphsSolid State Communications, 1972
- Nonuniform Lateral Ionic Impurity Distributions at Si-SiO[sub 2] InterfacesJournal of the Electrochemical Society, 1972
- Bonding and Delocalization Effects in SiPolymorphsPhysical Review Letters, 1971
- Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurementsSurface Science, 1971
- Hydrides and Hydroxyls in Thin Silicon Dioxide FilmsJournal of the Electrochemical Society, 1971
- Structure Analysis of Thermal Oxide Films of Silicon by Electron Diffraction and Infrared AbsorptionJapanese Journal of Applied Physics, 1970
- Characteristics of Fast Surface States Associated with SiO[sub 2]-Si and Si[sub 3]N[sub 4]-SiO[sub 2]-Si StructuresJournal of the Electrochemical Society, 1969
- Semiconductor Surface VaractorBell System Technical Journal, 1962