Enhanced Thermal Oxidation of Silicon by UV-Irradiation
- 1 April 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (4B) , L661
- https://doi.org/10.1143/jjap.30.l661
Abstract
Silicon can be thermally oxidized at low temperatures under dry O2 or N2O flow with UV-irradiation. The oxide thickness is about 9.0 nm in 4 h at 500°C on dry O2+UV oxidation. The oxide formed by dry O2+UV is thicker than that formed by N2O+UV at a relatively long oxidation time. The main oxidation species are ozone for dry O2+UV and excited-state 1D oxygen atoms for N2O+UV. The quality of oxide film formed by dry O2+UV is equal to that formed by common oxidation in dry O2 without UV.Keywords
This publication has 5 references indexed in Scilit:
- Enhancement in Thermal Oxidation of Silicon by OzoneJournal of the Electrochemical Society, 1989
- Low-Temperature Thermal Oxidation of Silicon in N2O by UV-IrradiationJapanese Journal of Applied Physics, 1989
- Low-Temperature Growth of Silicon Dioxide Film by Photo-Chemical Vapor DepositionJapanese Journal of Applied Physics, 1984
- Characterization of Plasma‐Deposited Silicon DioxideJournal of the Electrochemical Society, 1981
- An Auger analysis of the SiO2-Si interfaceJournal of Applied Physics, 1976