Cathodoluminescence of single quantum wires and vertical quantum wells grown on a submicron grating
- 7 February 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (6) , 695-697
- https://doi.org/10.1063/1.111037
Abstract
We present cathodoluminescence (CL) investigations of a corrugated GaAs/AlGaAs single quantum well (QW) structure grown on a submicron grating. The CL spectra have four distinct emission peaks. Using plan-view and cross-sectional CL imaging together with cross-sectional transmission electron microscope imaging, we have assigned the four peaks: They originate in the nominal QW, a quantum wire (QWR), a vertical quantum well (VQW), and the barrier, respectively. We have CL-imaged and -characterized single QWRs and VQWs.Keywords
This publication has 12 references indexed in Scilit:
- 1D Charge Carrier Dynamics in GaAs Quantum Wires Carrier Capture, Relaxation, and RecombinationPhysica Status Solidi (b), 1992
- Quantum wire lasersProceedings of the IEEE, 1992
- Semiconductor quantum-wire structures directly grown on high-index surfacesPhysical Review B, 1992
- Quantum wire structures by MBE overgrowth on a cleaved edgeJournal of Crystal Growth, 1991
- Microfabrication and optical study of reactive ion etched InGaAsP/InP and GaAs/GaAlAs quantum wiresApplied Physics Letters, 1990
- Strain-induced confinement of carriers to quantum wires and dots within an InGaAs-InP quantum wellApplied Physics Letters, 1989
- New Fabrication Technique of Quantum Wire Structures with Dimensions Precisely Controlled by the CBE MethodJapanese Journal of Applied Physics, 1989
- Molecular beam epitaxy of GaAs/AlGaAs superlattice heterostructures on nonplanar substratesApplied Physics Letters, 1987
- Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxesApplied Physics Letters, 1986
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982