Systematics of electron mobility in Si/SiGe heterostructures

This publication has 14 references indexed in Scilit:

• Quantized Hall effects in high-electron-mobility Si/Ge structures
  Physical Review B, 1992
• Charge transfer and low-temperature electron mobility in a strained Si layer in relaxed Si1−xGex
  Applied Physics Letters, 1992
• Observation of the fractional quantum Hall effect in Si/SiGe heterostructures
  Applied Physics Letters, 1992
• High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer
  Semiconductor Science and Technology, 1992
• Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy
  Applied Physics Letters, 1991
• Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates
  Applied Physics Letters, 1991
• Anomalous strain relaxation in SiGe thin films and superlattices
  Physical Review Letters, 1991
• High electron mobility in modulation-doped Si/SiGe
  Applied Physics Letters, 1991
• Cooperative growth phenomena in silicon/germanium low-temperature epitaxy
  Applied Physics Letters, 1988
• Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
  Physical Review Letters, 1985