InGaAs/InAlAs/AlAs heterostructure barrier varactors for harmonic multiplication
- 1 July 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 8 (7) , 254-256
- https://doi.org/10.1109/75.701383
Abstract
In this work, we report on the radio frequency (RF) characterization up to 110 GHz of probable high-performance heterostructure barrier varactors fabricated from InP-based strained epilayers. By making use of a dual step-like barrier scheme, the voltage handling is as high as 12 V whereas the capacitance ratio at 85 GHz achieves 5:1 for a zero-bias capacitance of 1 fF//spl mu/m/sup 2/ without deviation in the frequency band investigated. Good agreement between calculated and measured scattering parameters is found on the basis of electromagnetic simulation of diode embedding.Keywords
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