Characterization of Dislocations in GaAs Grown on Si and Ge
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Dislocation motion in GaAs/AlxGa1−xAs structuresJournal of Applied Physics, 1985
- Antiphase boundaries in GaAsApplied Physics Letters, 1985
- DEFECTS IN GaAs GROWN ON Ge SUBSTRATESMRS Proceedings, 1985
- Some observations on Ge:GaAs(001) and GaAs:Ge(001) interfaces and filmsJournal of Vacuum Science & Technology B, 1983
- Surface processes controlling MBE heterojunction formation: GaAs(100)/Ge interfacesJournal of Vacuum Science and Technology, 1982
- Partial dislocations, columnar growth, clustering, and pinhole formation in ultrathin film semiconductor heterostructuresJournal of Vacuum Science and Technology, 1981
- Antiphase boundaries in semiconducting compoundsJournal of Physics and Chemistry of Solids, 1969