Experimental Evidence of an Electronic Localization in n‐Type InSb Using a Microwave Technique
- 1 October 1975
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 71 (2) , 623-630
- https://doi.org/10.1002/pssb.2220710224
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Structure of the Impurity Band and Magnetic‐Field‐Induced Metal‐Non‐Metal Transition in n‐Type InSbPhysica Status Solidi (b), 1975
- Electrical conduction in heavily doped germaniumPhilosophical Magazine, 1972
- Electrical conduction in the Wigner lattice in n-type InSb in a magnetic fieldJournal of Physics C: Solid State Physics, 1971
- Temperature dependence of the conversion loss and response time of InSb mixersIEEE Transactions on Electron Devices, 1970
- Compensation Dependence of Impurity Conduction in Antimony-Doped GermaniumPhysical Review B, 1965
- Effects of the electron interaction on the energy levels of electrons in metalsTransactions of the Faraday Society, 1938