Interaction between surface morphology and misfit dislocations as strain relaxation modes in lattice-mismatched heteroepitaxy
- 22 November 2002
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 14 (48) , 12829-12841
- https://doi.org/10.1088/0953-8984/14/48/323
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Instability-Driven SiGe Island GrowthPhysical Review Letters, 2000
- Nucleationless Three-Dimensional Island Formation in Low-Misfit HeteroepitaxyPhysical Review Letters, 2000
- Transition States Between Pyramids and Domes During Ge/Si Island GrowthScience, 1999
- Evolution of coherent islands inPhysical Review B, 1999
- Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to DomesScience, 1998
- STM study of the Ge growth mode on Si(001) substratesApplied Surface Science, 1994
- Low-temperature growth of Ge on Si(100)Applied Physics Letters, 1991
- Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)Physical Review Letters, 1990
- Defects in epitaxial multilayersJournal of Crystal Growth, 1975
- Defects in epitaxial multilayers I. Misfit dislocationsJournal of Crystal Growth, 1974