The effect of ion beam mixing on MoSi2 formation
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 19-20, 742-745
- https://doi.org/10.1016/s0168-583x(87)80148-9
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Influence of P and As implantation of the formation of MoSi2Journal of Applied Physics, 1985
- Low-resistance MOS technology using self-aligned refractory silicidationIEEE Transactions on Electron Devices, 1984
- Epitaxial regrowth of intrinsic, 31P-doped and compensated (31P+11B-doped) amorphous SiJournal of Applied Physics, 1982
- Refractory metal silicide formation induced by As+ implantationApplied Physics Letters, 1980