Compositional and electrical properties of InSb MOS structure
- 1 January 1991
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 34 (1) , 107-109
- https://doi.org/10.1016/0038-1101(91)90207-f
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Characterization of interface electrical properties in SiO2/InSb metal/insulator/semiconductor structures prepared by plasma-enhanced chemical vapour depositionThin Solid Films, 1987
- Interface characterization of InSb MOS structuresThin Solid Films, 1982
- Chemical composition and formation of thermal and anodic oxide/III–V compound semiconductor interfacesJournal of Vacuum Science and Technology, 1981
- XPS study of interface formation of CVD SiO2 on InSbJournal of Vacuum Science and Technology, 1981
- Phase composition of thin oxide films on InSbThin Solid Films, 1981
- Interface formation of deposited insulator layers on GaAs and InPThin Solid Films, 1979
- Characterization of improved InSb interfacesJournal of Vacuum Science and Technology, 1979
- Characteristics of thermal oxides grown on GaAs1 − xPxThin Solid Films, 1979
- X-Ray Photoemission Study of the Oxidation Process at Cleaved (110) Surfaces of GaAs, GaP and InSbJapanese Journal of Applied Physics, 1978
- Perspectives on III–V compound MIS structuresJournal of Vacuum Science and Technology, 1978