Molecular model for intrinsic time-dependent dielectric breakdown in SiO2dielectrics and the reliability implications for hyper-thin gate oxide
- 1 May 2000
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 15 (5) , 462-470
- https://doi.org/10.1088/0268-1242/15/5/305
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
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