Fabrication and characteristics of MOS-FET's incorporating anodic aluminum oxide in the gate structure
- 1 March 1976
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (3) , 181-184
- https://doi.org/10.1016/0038-1101(76)90162-3
Abstract
No abstract availableKeywords
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