X‐ray diffraction studies of interdiffusion in InP-GaP powder blends
- 1 November 1989
- journal article
- Published by Wiley in Crystal Research and Technology
- Vol. 24 (11) , 1177-1185
- https://doi.org/10.1002/crat.2170241116
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- X‐ray diffraction studies of interdiffusion in InAs—GaAs powder blendsCrystal Research and Technology, 1988
- Arsenic Pressure Dependence of Interdiffusion of AlGaAs/GaAs Interface in Quantum WellJapanese Journal of Applied Physics, 1987
- Critical analysis and optimization of the thermodynamic properties and phase diagrams of the III–V compounds II. The Ga-As and In-As systemsJournal of Crystal Growth, 1984
- Critical analysis and optimization of the thermodynamic properties and phase diagrams in the III-V compounds: The In-P and Ga-P systemsJournal of Crystal Growth, 1984
- X-ray diffraction line profile analysis of diffusional homogenization in powder blendsJournal of Materials Science, 1978
- The mean square atomic displacements and enthalpies of vacancy formation in some semiconductorsPhysica Status Solidi (a), 1978
- Relation of vacancy formation and migration energies to the Debye temperature in solidsJournal of Physics and Chemistry of Solids, 1967
- X-Ray Diffraction Study of Interdiffusion in Cu–Ni Powder CompactsJournal of Applied Physics, 1961
- Diffusion in Compound SemiconductorsPhysical Review B, 1961
- An X-ray diffraction method for the determination of composition distribution in inhomogeneous binary solid solutionsActa Crystallographica, 1960