Bonding of fluorine-implanted and annealed silicon
- 28 February 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 53 (6) , 513-517
- https://doi.org/10.1016/0038-1098(85)90181-4
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Boron, fluorine, and carrier profiles for B and BF2 implants into crystalline and amorphous SiJournal of Applied Physics, 1983
- Nucleation and growth rate of a-Si alloysApplied Physics Letters, 1983
- A structural interpretation of the infrared absorption spectra of a-Si:H:O alloysSolar Energy Materials, 1982
- Electrical properties of Si heavily implanted with boron molecular ionsJournal of Applied Physics, 1982
- Bonding of fluorine in amorphous hydrogenated siliconPhysical Review B, 1980
- Kinetic analysis of hydrogen evolution from reactively sputtered amorphous silicon-hydrogen alloysPhysical Review B, 1980
- Infrared Spectra of Amorphous Silicon-Fluorine Alloys Prepared by Sputtering in Fluorosilane-Argon Gas MixtureJapanese Journal of Applied Physics, 1980
- A heat-resisting new amorphous siliconApplied Physics Letters, 1980
- Microanalysis of Flourine by nuclear reactionsNuclear Instruments and Methods, 1980