Large capacity As2 source for molecular beam epitaxy

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Abstract
Molecular beam epitaxy (MBE) is a crystal growth technique capable of growing ultrathin layered heterostructures for basic studies, and devices such as modulation doped field-effect transistors (MODFET’s), heterojunction lasers, heterojunction bipolar transistors (HBT’s), and superlattices. By using a dimeric arsenic source to grow GaAs and AlGaAs layers, the crystalline quality of these devices and structures may be improved, ultimately improving device performance. The design of a novel large capacity effusion cell (capable of producing about 700 μm GaAs growth) for cracking tetrameric arsenic into dimeric arsenic and the results of its use are described.