Properties of a New Avalanche Diode Oscillator Computed by a Large-Signal, Self-Consistent Simulation

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Abstract
An analog simulation technique is applied to a large-signal analysis of a new type of an avalanche diode oscillator by considering the effects of the external circuit. To utilize the field variation due to the space-charge accumulation of the avalanche-multiplied carriers, a diode having double-peaks in its internal fiield distribution is proposed. The results of the simulation show that a new diode can operate with a high-efficiency under the resistive load as well as under the resonant circuit load. Also a new application in high-speed pulse circuits is expected from the pulse response characteristics. Effects of the external circuit conditions such as the impedance matching and the second harmonic tuning are studied. An injection-locking phenomenon is also simulated. These findings of characteristic features show the inherent advantage of the self-consistent analog-simulation method.

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