Electrical and structural properties of InAs layers on (100) GaAs substrates prepared by molecular beam deposition
- 1 October 1980
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 50 (2) , 538-548
- https://doi.org/10.1016/0022-0248(80)90105-0
Abstract
No abstract availableKeywords
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