Dielectric-assisted liftoff technique for the formation and monolithic integration of electronic and optical devices
- 10 December 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (24) , 2576-2578
- https://doi.org/10.1063/1.103820
Abstract
A technique for the selective growth and patterning of device quality materials has been developed. This technology uses a dielectric-assisted liftoff (DAL) process to pattern molecular beam epitaxy (MBE) grown GaAs into isolated device regions. We have successfully demonstrated the applicability of this dielectric-assisted liftoff process by fabricating power metal-semiconductor field-effect transistor (MESFET) devices with 1, 1.5, and 3 mm gate width geometries. Material and device performance of these DAL patterned MESFETs has been found to be comparable to our standard MBE-grown and mesa isolated MESFET structures.Keywords
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