Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm
- 14 October 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (16) , 2347-2349
- https://doi.org/10.1063/1.125010
Abstract
We demonstrate the possibility of extending the spectral range of luminescence due to InAs quantum dots (QDs) in a GaAs matrix up to 1.7 μm. Realization of such a long wavelength emission is related to formation of lateral associations of QDs during InAs deposition at low substrate temperatures (∼320–400 °C).Keywords
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