Structural characterization of ion-beam synthesized NiSi2 layers
- 1 August 1995
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (3) , 1707-1712
- https://doi.org/10.1063/1.360268
Abstract
NiSi2(111) and NiSi2(100) layers with good crystalline quality have been formed by ion‐beam synthesis. An unusual Ni atom distribution showing two completely separated layers during a single implantation step has been observed by Rutherford backscattering spectrometry (RBS) and transmission electron microscopy (TEM). The orientation, strain, and stiffness of the NiSi2 layers have been studied by RBS/channeling, x‐ray diffraction, and TEM. The results show that the continuous NiSi2 layers have type‐A orientation with a parallel elastic strain larger than the theoretical value of 0.46% for pseudomorphic growth. The perpendicular strain of the NiSi2(111) layers is apparently smaller than that of NiSi2(100) layers, indicating a higher stiffness in the 〈111〉 direction.This publication has 24 references indexed in Scilit:
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