Decomposition mechanisms of trimethylarsine
- 1 April 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 102 (1-2) , 117-125
- https://doi.org/10.1016/0022-0248(90)90892-o
Abstract
No abstract availableKeywords
This publication has 36 references indexed in Scilit:
- Investigation of carbon incorporation in GaAs using13C-enriched trimethylarsenic and13Ch4Journal of Electronic Materials, 1988
- Growth of GaAs by metalorganic chemical vapor deposition using thermally decomposed trimethylarsenicApplied Physics Letters, 1987
- The role of impurities in III/V semiconductors grown by organometallic vapor phase epitaxyJournal of Crystal Growth, 1986
- Metalorganic chemical-vapour-deposition growth and characterization of GaAsCanadian Journal of Physics, 1985
- Metal organics vapour phase epitaxy of GaAs : Raman studies of complexes formationRevue de Physique Appliquée, 1985
- GaAs1−xSbx growth by OMVPEJournal of Electronic Materials, 1984
- Mechanism of carbon incorporation in MOCVD GaAsJournal of Crystal Growth, 1984
- Organometallic vapor phase epitaxial growth of GaAs0.5Sb0.5Applied Physics Letters, 1984
- Improved mobility in OM-VPE-grown Ga
1−
x
In
x
AsElectronics Letters, 1981
- Use of trimethylantimony and trimethylarsenic for organometallic v.p.e. growth of GAAs 1 - y Sb y and Ga 1 - x In x AsElectronics Letters, 1980