Energy distribution of surface states in the Si band-gap for MOS diodes obtained from XPS measurements under biases

This publication has 29 references indexed in Scilit:

• Separation of two distinct fast interface state contributions at the (100)Si/SiO2 interface using the conductance technique
  Applied Physics Letters, 1992
• Angle-resolved photoemission from Si(100): Direct versus indirect transitions
  Surface Science, 1986
• Accurate phase capacitance spectroscopy of transition metal silicon diodes
  Applied Physics Letters, 1985
• Surface states on Si(111)-(2×1)
  Physical Review B, 1981
• Photoemission Measurements of Step-Dependent Surface States on Cleaved Silicon (111)
  Physical Review Letters, 1975
• MOS and vertical junction device characteristics of epitaxial silicon on low aluminum-rich spinel
  Solid-State Electronics, 1970
• A quasi-static technique for MOS C-V and surface state measurements
  Solid-State Electronics, 1970
• The Si-SiO₂Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
  Bell System Technical Journal, 1967
• Surface states at steam-grown silicon-silicon dioxide interfaces
  IEEE Transactions on Electron Devices, 1966
• An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes
  Solid-State Electronics, 1962