Separation of two distinct fast interface state contributions at the (100)Si/SiO2 interface using the conductance technique
- 3 February 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (5) , 624-626
- https://doi.org/10.1063/1.107461
Abstract
We have studied the annealing of fast and slow Si/SiO2 interface states generated by 10-MeV electron irradiation using the conductance technique. The fast-state conductance peak is shown to be separable into contributions from defects characterized by two different capture cross sections, densities of states, and annealing behaviors.Keywords
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