Observation of ‘‘slow’’ states in conductance measurements on silicon metal-oxide-semiconductor capacitors
- 10 April 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (15) , 1448-1450
- https://doi.org/10.1063/1.100693
Abstract
We report the observation of a low-frequency plateau in conductance measurements on silicon metal-oxide-semiconductor capacitors. The signal is consistent with the ‘‘slow’’ states observed by other techniques, in particular those states responsible for 1/f noise in silicon metal-oxide-semiconductor field-effect transistors.Keywords
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