Optical properties of symmetrically strained (GaIn)As/Ga(PAs) superlattices grown by metalorganic vapour phase epitaxy

This publication has 14 references indexed in Scilit:

• Metal-organic vapour-phase epitaxial growth of symmetrically strained (GaIn)As/Ga(PAs) superlattices
  Materials Science and Engineering: B, 1993
• Band edge offset in strained In_xGa_1-xAs/GaAs quantum wells measured by high-excitation photoluminescence
  Semiconductor Science and Technology, 1993
• Gas source molecular beam epitaxy of alternated tensile / compressive strained GaInAsP multiple quantum wells emitting at 1.5 μm
  Journal of Crystal Growth, 1993
• Growth of strain-balanced InAsP/InGaP superlattices for 1.06 μm optical modulators
  Applied Physics Letters, 1993
• Origin of the Stokes shift: A geometrical model of exciton spectra in 2D semiconductors
  Physical Review Letters, 1993
• Highly thermally stable, high-performance InGaAsP: InGaAsP multi-quantum-well structures for optical devices by atmospheric pressure MOVPE
  Journal of Crystal Growth, 1992
• Pseudomorphic InGaAs-GaAsP quantum well modulators on GaAs
  Applied Physics Letters, 1992
• Absorption spectroscopy on ${\mathrm{Ga}}_{0.47}$${\mathrm{In}}_{0.53}$As/${\mathrm{Al}}_{0.48\mathrm{L}}$${\mathrm{In}}_{0.52}$As multi-quantum-well heterostructures. I. Excitonic transitions
  Physical Review B, 1987
• Excitonic Absorption Spectra of GaAs–AlAs Superlattice at High Temperature
  Japanese Journal of Applied Physics, 1984
• Interband Optical Transitions in Extremely Anisotropic Semiconductors. I. Bound and Unbound Exciton Absorption
  Journal of the Physics Society Japan, 1966