50-Gb/s Direct Modulation of a 1.3-μm InGaAlAs-Based DFB Laser With a Ridge Waveguide Structure
- 9 January 2013
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Selected Topics in Quantum Electronics
- Vol. 19 (4) , 1500908
- https://doi.org/10.1109/jstqe.2013.2238509
Abstract
We demonstrate 50-Gb/s direct modulation by using 1.3-μm distributed-feedback lasers with a ridge waveguide structure. We employed InGaAlAs material for a multiple-quantum well to obtain a low damping factor K , and fabricated a ridge waveguide structure buried in benzocyclobutene to realize a structure with a low parasitic capacitance. In addition, to obtain high maximum frequency relaxation oscillations fr, we designed the cavity length L ), and achieved a 3-dB-down frequency bandwidth of 34 GHz. We realized 50-Gb/s clear eye openings with a back-to-back configuration, and achieved a mean output power of over 5.0 dBm, and a dynamic extinction ratio of 4.5 dB. We measured the 50-Gb/s transmission characteristics, and obtained clear eye openings for transmissions over 20-, 40-, and 60-km single-mode fibers (SMF). We also measured the bit-error-rate performance, and obtained an error-free operation and a power penalty of less than 0.5 dB after a 10-km SMF transmission.Keywords
This publication has 12 references indexed in Scilit:
- 1.3 μm, 56-Gbit/s EML Module target to 400GbEPublished by Optica Publishing Group ,2012
- High-Speed Directly Modulated LasersPublished by Optica Publishing Group ,2012
- 1.3 µm, 50 Gbit/s electroabsorption modulators integrated with DFB laser for beyond 100G parallel LAN applicationsElectronics Letters, 2011
- 1.3-$\mu$m AlGaInAs Multiple-Quantum-Well Semi-insulating Buried-Heterostructure Distributed-Feedback Lasers for High-Speed Direct ModulationIEEE Journal of Selected Topics in Quantum Electronics, 2009
- 40-Gb/s Direct Modulation With High Extinction Ratio Operation of 1.3-$\mu$m InGaAlAs Multiquantum Well Ridge Waveguide Distributed Feedback LasersIEEE Photonics Technology Letters, 2007
- Pure effects of strain in strained-layer multiple-quantum-well lasersIEEE Journal of Quantum Electronics, 1993
- Intensity noise in 1.5µm GaInAs quantum well buried heterostructure lasersElectronics Letters, 1989
- Frequency response of 1.3µm InGaAsP high speed semiconductor lasersIEEE Journal of Quantum Electronics, 1987
- Ultra-high-speed modulation of 1.3-µm InGaAsP diode lasersIEEE Journal of Quantum Electronics, 1986
- High-speed InGaAsP constricted-mesa lasersIEEE Journal of Quantum Electronics, 1986